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Gallium-arsenide solar cells having conversion-efficiency values greater than 11 per cent are described. Crystalline properties of gallium arsenide are discussed, and cell design considerations are given. Gallium arsenide provides several advantages over silicon in the fabrication of high-efficiency cells having improved temperature characteristics and higher radiation-resistance properties. Typical cell characteristics are presented and compared with those of silicon cells. In addition, data are given to show the effects on gallium arsenide cells of incident solar energy, temperature, radiation, and life.