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Study on solid phase epitaxy of sputtered SiGe film

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6 Author(s)
Qi, W.J. ; Dept. of Electron. Eng., Fudan Univ., Shanghai, China ; Li, B.Z. ; Jiang, G.B. ; Huang, W.N.
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The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectroscopy show the epitaxial character of SiGe film on Si substrate

Published in:

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Date of Conference:

24-28 Oct 1995