By Topic

Circuit hot carrier reliability simulation in advanced CMOS technology process development

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Peng Fang ; Adv. Micro Devices Inc., Sunnyvale, CA, USA ; P. C. Li ; J. T. Yue

DC hot carrier parameters, e.g. Idsat and Idlin, were found to be correlated to AC ring oscillator frequency degradation. The impact of crosstalk induced voltage overshoot on invertor hot carrier degradation was quantified by reliability simulation. A set of designable parameters was used to ensure deep submicron technology hot carrier reliability

Published in:

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Date of Conference:

24-28 Oct 1995