By Topic

Deep level photothermal spectroscopy for characterizing Ni impurities in Si by a temperature dependent piezoelectric photothermal signal

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sato, S. ; Department of Electrical and Electronic Engineering, Miyazaki University, Miyazaki 889-2192, Japan ; Memon, A. ; Fukuyama, A. ; Tanaka, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The temperature variation of the piezoelectric photothermal (PPT) signal intensity of n-type Ni-doped Si was measured from 100 to 300 K. We observed one distinctive peak at 150 K in Ni-doped sample. Since no intense peak could be observed for the controlled sample, we consider this 150 K peak is due to Ni impurity. The activation energy, electron capture cross section, photoionization cross section and concentrations for Ni-deep level are obtained by fitting the observed curve to that from the theoretical analysis based on a rate equation for electrons. The best-fitted parameters are well agreed with that obtained by usual deep level transient spectroscopy measurements and isothermal capacitance transient spectroscopy. Additionally, photoionization cross section of Ni-deep level in Si can be obtained by this method. Since no electrodes are necessary in this experimental technique, the PPT measurement for studying the deep level in semiconductor is very useful. © 2003 American Institute of Physics.

Published in:

Review of Scientific Instruments  (Volume:74 ,  Issue: 1 )