Referenced Items are not available for this document.
Low pump-power operation of GaP semiconductor Raman lasers with a tapered waveguide structure is reported. The waveguides are both laterally and vertically tapered and fabricated by the temperature difference method under controlled vapour pressure with liquid-phase epitaxy and an improved growth process, which has not caused any serious increase of internal optical loss. The lowest threshold pump power of 55 mW has been achieved
Published in:
Optoelectronics, IEE Proceedings -
(Volume:143
,
Issue:
2
)
Date of Publication: Apr 1996
- Page(s):
- 113 - 118
- ISSN :
- 1350-2433
- INSPEC Accession Number:
- 5269399
- Digital Object Identifier :
- 10.1049/ip-opt:19960238
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1996
- Sponsored by :
- IET
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