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Electron cyclotron resonance ion source for high currents of mono- and multicharged ion and general purpose unlimited lifetime application on implantation devices

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7 Author(s)
Bieth, C. ; Pantechnik s.a., Caen 14000, France ; Bouly, J.L. ; Curdy, J.C. ; Kantas, S.
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The electron cyclotron resonance (ECR) ion sources were originally developed for high energy physic applications. They are used as injectors on linear accelerators and cyclotrons to further increase the particle energy via high charge state ions. This ECR technology is well suited for sources placed on a high voltage platform where ac power available is limited by insulated transformers. The PANTECHNIK family of ion source with its wide range of ion beam (various charge states with various beam currents) offers new possibilities and perspectives in the field of ion implantation. In addition to all these possibilities, the PANTECHNIK ion sources have many other advantages like: a very long lifetime without maintenance expense, good stability, efficiency of ionization close to 100% (this improves the lifetime of the pumping system and other equipment), the possibility of producing ion beams with different energies, and a very good reproducibility. The main characteristics of sources like Nanogan or SuperNanogan will be recalled. We will especially present the results obtained with the new Microgan 10 GHz source that can be optimized for the production of high currents of monocharged ion, including reactive gas like BF3 (2 mA e of B+) or medium currents of low charge state like 0.5 mA e of Ar4+. The latest results obtained with Microgan 10 GHz show that it is possible to drive the source up to 30 mA e of total current, with an emittance of 150 π mm mrad at 40 kV and also to maintain the production of multicharged ions like Ar8+. © 2000 American Institute of Physics.

Published in:

Review of Scientific Instruments  (Volume:71 ,  Issue: 2 )