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Cell-plate-line/bit-line complementary sensing (CBCS) architecture for ultra low-power DRAMs

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4 Author(s)
Hamamoto, T. ; ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; Morooka, Yoshikazu ; Asakura, M. ; Ozaki, H.

In the realization of gigabit scale DRAMs, one of the most serious problems is how to reduce the array power consumption without degradation of the operating margin and other characteristics. This paper proposes a new array architecture called cell-plate-line/bit-line complementary sensing (CBCS) architecture which realizes drastic array power reduction for both read/write operations and refresh operations, and develops a large readout voltage difference on the bit-line and cell-plate-line. For read/write operations, the array power reduces to only 0.2%, and for refresh operations becomes 36%, This architecture requires no unique process technology and no additional chip area. Using a test device with a 64-Mb DRAM process, the basic operation has been successfully demonstrated. This new memory core design realizes a high-density DRAM suitable for the 1-Gb level and beyond with power consumption significantly reduced

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 4 )