Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1149714
A system has been developed to directly measure the flow of inert gases through an arbitrary thin film. The system employs a porous aluminum silicate ceramic as the substrate for film deposition, a flow control apparatus to hold the substrate under vacuum and allow a helium gas pressure differential to be established across the substrate, and a helium leak detector to measure the flow of helium through the substrate/film combination. This allows calculation of the permeability of the film. The permeability of plasma enhanced chemical vapor deposited diamondlike carbon films and sputter deposited silicon nitride, and nickel films were measured. A thermally grown silicon dioxide film was also tested. © 1999 American Institute of Physics.