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We have constructed a scanning tunneling microscope with simultaneous light collection capabilities in order to investigate the opto-electronic properties of semiconductors. The microscope has in situ sample cleavage mechanism for cross-sectional sample. In order to reach low temperature (4 K), we used a specially designed cryostat. The efficiency of light collection generated in the tip-surface junction was greatly improved by use of a small parabolic mirror with the tip located at its focal point. © 1999 American Institute of Physics.
Published in:
Review of Scientific Instruments
(Volume:70
,
Issue:
12
)
Date of Publication: Dec 1999