Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1150118
We have constructed a scanning tunneling microscope with simultaneous light collection capabilities in order to investigate the opto-electronic properties of semiconductors. The microscope has in situ sample cleavage mechanism for cross-sectional sample. In order to reach low temperature (4 K), we used a specially designed cryostat. The efficiency of light collection generated in the tip-surface junction was greatly improved by use of a small parabolic mirror with the tip located at its focal point. © 1999 American Institute of Physics.