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Principles and characteristics of a new generation plasma immersion ion implanter

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4 Author(s)
Chu, P.K. ; Department of Physics and Materials Science, City University of Hong Kong, Hong Kong ; Tang, B.Y. ; Cheng, Y.C. ; Ko, P.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1147959 

A new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed, and installed in the City University of Hong Kong. The system is designed for general R&D applications in metallurgy, tribology, surface modification, and fabrication of novel materials. Using the new rf ion source in conjunction with the internal antenna system, the plasma density achieves excellent uniformity both laterally and axially. The system also incorporates two metal sources, including four metal arc sources and a sputtering electrode, so that multiple metal deposition and implantation steps can be performed in succession in the same equipment without exposing the samples to air. This capability can be critical to the study of surface properties and corrosion resistance. This article describes the design objectives, the novel features, and the characteristics of this new generation PIII equipment. © 1997 American Institute of Physics.

Published in:

Review of Scientific Instruments  (Volume:68 ,  Issue: 4 )

Date of Publication:

Apr 1997

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