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High‐temperature thermal resistors based on silicon carbide

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3 Author(s)
Avramenko, S. ; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky 45, 252650 Kyiv, Ukraine ; Kiselev, V. ; Pavlenko, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1147081 

The technique of high‐temperature cheap thermal resistor fabrication, based on polycrystal and fast neutron irradiated silicon carbide single crystals, is presented. The operating temperature range is 20–600 °C for polycrystal devices and 200–800 °C for single crystal devices and coefficient B in the expression R=R0 exp(B/T) is equal to 4500 and 10 000, respectively. © 1996 American Institute of Physics.

Published in:

Review of Scientific Instruments  (Volume:67 ,  Issue: 8 )