Production and parameter control techniques of sheet‐shaped electron cyclotron resonance heating (ECRH) plasma are described. When rf power (f≂13.56 MHz) is supplemented by the sheet‐shaped ECR plasma, the ion temperature, Ti, ion fluxes, nb/n0, and high energy component, ϵi, of ions deposited to the substrate can be controlled arbitrarily within the range of 0.3 eV≤Ti≤10.0 eV, 0≤nb/n0≤30%, and 0≤ϵi≤60 eV, respectively, in the neutral Ar gas pressure, 4×10-4≤p≤3×10-3 Torr. Furthermore, the ion energy and/or the ion flux flowing onto the substrate could be well controlled by changing the bias voltage supplied to the substrate holder. We can expect that the present experimental technique could be applied to the material processing in a well‐defined manner. © 1996 American Institute of Physics.