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A physical-based analytical turn-on model of polysilicon thin film transistors for circuit simulation

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4 Author(s)
Gi-Young Yang ; Center for Electro-Optics, Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Sung-Hoi Hur ; Kim, Choong‐Ki ; Han, Chul‐Hi

A physical-based analytical current model of poly-Si TFTs for circuit simulation is presented. The model includes the barrier potential at grain boundaries, drain induced grain barrier lowering (DIGBL), temperature dependence, and the kink effect. The basic equation in the model has an algebraic form for implementation in circuit simulators. The model has the advantages of: simple relations between the model parameters and the device or material parameters; and ease of implementation in circuit simulators. In addition to the current model, a capacitance model based on the current model is presented. Comparisons between the model and measured results show excellent agreements in the wide range of operating voltages and for devices with different dimensions

Published in:

Electron Devices Meeting, 1995. IEDM '95., International

Date of Conference:

10-13 Dec 1995