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A 0.54 μm2 self-aligned, HSG floating gate cell (SAHF cell) for 256 Mbit flash memories

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6 Author(s)
Shirai, H. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Kubota, T. ; Honma, I. ; Watanabe, H.
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A 0.54 μm2 self-aligned memory cell with hemispherical-grained (HSG) poly-Si floating gate (SAHF cell) has been developed for 256 Mbit flash memories. Applying hemispherical-grained (HSG) poly-Si to floating gate extends the upper surface area to double that of the floating gate in comparison with the conventional ones. A high capacitive-coupling ratio of 0.8 and buried n+ diffusion layers which are self-aligned to the floating gate poly-Si are realized simultaneously with a simple cell structure and fewer process steps

Published in:

Electron Devices Meeting, 1995. IEDM '95., International

Date of Conference:

10-13 Dec 1995