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SOI MOSFET design for all-dimensional scaling with short channel, narrow width and ultra-thin films

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5 Author(s)
Chan, M. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Fung, S.K.H. ; Hui, K.Y. ; Chenming Hu
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The effects of scaling MESA isolated (with sidewall reoxidation) SOI MOSFETs with respect to channel length, channel width, silicon film thickness and buried oxide thickness have been studied experimentally. Characteristics of narrow-width devices have a strong dependence on T Si. In devices with small TSi, narrow-width effect dominates over short channel effect. Thin buried oxide reduces self-heating and short channel effect, but results in a lower intrinsic current drive due to the effect of backside coupling. The trade-offs and limitations for scaling individual dimension in MESA isolated SOI MOSFETs are discussed

Published in:

Electron Devices Meeting, 1995. IEDM '95., International

Date of Conference:

10-13 Dec 1995