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High sensitivity porous silicon photodetector

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3 Author(s)
Ming-Kwei Lee ; Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Yu-Chu Tseng ; Chi-Hsing Chu

In this work, a high sensitivity porous silicon photodetector through rapid thermal oxidation has been studied. The photoresponse is 0.85 mA/mW at reverse-biased 10 V under tungsten lamp illumination with power 21.5 mW

Published in:

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Date of Conference:

24-28 Oct 1995

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