Referenced Items are not available for this document.
The observation of impact ionization in small Si FETs at sub-band-gap source-to-drain bias is explained by the presence of high-energy tails in the electron energy distribution around the drain region. These tails are caused by the strong thermalizing effect of dynamically-screened electron-electron interactions. Under these bias conditions, a larger band-gap, enhanced dielectric screening, and reduced high-energy tails in the distribution function at the source cause a reduction of impact ionization at lower lattice temperatures
Published in:
Electron Devices Meeting, 1995. IEDM '95., International
Date of Conference: 10-13 Dec 1995
- Page(s):
- 305 - 308
- Meeting Date :
- 10 Dec 1995-13 Dec 1995
- ISSN :
- 0163-1918
- Print ISBN:
- 0-7803-2700-4
- INSPEC Accession Number:
- 5237218
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/IEDM.1995.499202
- Product Type:
- Conference Publications
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