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A novel Dual String NOR (DuSNOR) memory cell technology scalable to the 256 Mbit and 1 Mbit flash memories

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9 Author(s)
Kim, K.-S. ; Samsung Electronics Co. Ltd., Kyungki-Do, South Korea ; Kim, J.-Y. ; Yoo, J.W. ; Choi, Y.B.
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We have developed a novel NOR-type flash memory technology named Dual String NOR (DuSNOR). In the DuSNOR cell array, two adjacent cell strings share a source line and up to 128 cell transistors can be attached to a string. This makes the cell size of DuSNOR smaller than NAND, without sacrificing the advantages of the NOR-type cell. Both the program and erase operations utilize the Fowler-Nordheim tunneling. DuSNOR cells with a cell size of 1.60 μm2 was fabricated using 0.5 μm design rules. It was found that the DuSNOR cell has a fast operating speed, reduced overprogram and disturb problems, and excellent endurance characteristics. DuSNOR is a promising technology for high density, high speed, and random-access flash memories with a small cell size, excellent device characteristics and simplicity in the fabrication process

Published in:

Electron Devices Meeting, 1995. IEDM '95., International

Date of Conference:

10-13 Dec 1995