Cart (Loading....) | Create Account
Close category search window
 

An optical technique for measurement of semiconductor surface electric fields

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sardesai, H.P. ; The University of Texas at Arlington, Applied Physical Electronics Research Center, Arlington, Texas 76019‐0308 ; Nunnally, W.C. ; Williams, P.F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1143292 

We present an optical technique for the measurement of semiconductor surface electric fields. The measurement technique uses the Kerr electro‐optic effect in nitrobenzene, a phase sensitive interferometer, and associated data acquisition units to measure the surface electric fields between the contacts of a planar semiconductor device. This technique was used to measure the surface fields on silicon devices used in pulsed power applications, but has the potential for use as an electric field probe for any device having high surface electric fields, both pulsed and dc. The measurement technique showed a temporal resolution of 100 ns, which can be easily reduced to a few nanoseconds using superior data acquisition and detection systems. The spatial resolution was about 50 μm for devices that had a typical contact separation of about 500 μm (power devices). This technique can be applied to measure the surface fields on devices commonly used in microelectronic applications. In this paper we discuss in detail the measurement technique and present the results obtained for silicon photoconductive power switches.

Published in:

Review of Scientific Instruments  (Volume:63 ,  Issue: 8 )

Date of Publication:

Aug 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.