A high performance pressure sensor using double silicon‐on‐insulator (SOI) structures, a (100) Si// (100) Al2O3// (100) Si/ SiO2/ (100) Si substrate, has been developed that is capable of very accurate operation at temperatures as high as 350 °C. A first SOI layer made by bonding two oxidized Si wafers together was employed as an etch‐stop layer during KOH selective anisotropic etching and for controlling the thickness of the thin diaphragm. A double‐heteroepitaxially grown second SOI layer on the first SOI layer was used as a dielectrically isolated single‐element four terminal strain gauge that was placed at the center of a rectangular diaphragm. The dimensions of the diaphragm and its thickness were 360 μm ×1140 μm and 5 μm, respectively. This sensor has high sensitivity (0.04 mV/V∙mmHg) for 700 mmHg full scale pressure range, with a nonlinearity less than +0.15% full scale. In the temperature range from -20 °C to +350 °C, the shift in sensitivity and offset voltage are less than -0.2% and +0.1%, respectively. Moreover, the implemented sensor is very useful for the miniaturization and integration of the sensor.