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A novel technique to prepare self‐supporting single‐crystalline Si films with submicron thicknesses is presented, in which their thicknesses are determined by those of amorphous Si films deposited on Si substrates. In the preparation Boron ions are implanted near the interface between the film and the substrate, the film is then epitaxially grown in solid phase by furnace annealing, and finally, the substrate is selectively etched. It was found that the thickness uniformity and crystalline quality of the films were rather good over an area of 3 mm in diameter.