Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and its application to III-Sb-based quantum-well broad-area edge-emitting laser diodes monolithically grown on an Si (0 0 1) substrate. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. A use of 5 $^{\circ}$ miscut Si substrates enables simultaneous IMF formation and suppression of an antiphase domain, resulting in a drastic suppression of dislocation density over the III-Sb epilayer and realization of electrically injected laser diodes operating at 77 K. The current–voltage characteristics indicate a diode turn-on of 0.7 V, which is consistent with a theoretical built-in potential of the laser diode. This device is characterized by a $9.1\hbox{-}\Omega$ forward resistance and a leakage current density of $0.7 \hbox{A/cm}^{2}$ at $-\hbox{5}$ V and $46.9\, \hbox{A/cm}^{2}$ at $-\hbox{15}$ V.