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\hbox {HfO}_{x} Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

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10 Author(s)
Heng Yuan Lee ; Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu ; Pang-Shiu Chen ; Tai-Yuan Wu ; Yu Sheng Chen
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A novel method of fabricating HfOx-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 105 cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfOx stacked layer in this letter shows promising application in the next generation of nonvolatile memory.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )

Date of Publication:

July 2009

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