By Topic

RESET Mechanism of TiOx Resistance-Change Memory Device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wei Wang ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA ; Fujita, Shinobu ; Wong, S.S.

In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )