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Self-Shunted NbN Junctions With {\rm NbN}_{x}/{\rm AlN} Bilayered Barriers for 4 K Operation

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4 Author(s)
Kanada, R. ; Dept. of Quantum Eng., Nagoya Univ., Nagoya, Japan ; Nagai, Y. ; Akaike, H. ; Fujimaki, A.

We report the fabrication and electrical characteristics of self-shunted Josephson junctions consisting of NbN electrodes, an AlN barrier, and an NbNx normal layer for an SFQ circuit application. To fabricate such junctions with a high characteristic voltage V c, we have studied their preparation conditions including the surface treatments of MgO substrates. Junction characteristics at 4 K were dependent on the electrical properties and film thickness of the NbNx layer; the underdamped junctions changed into overdamped ones with an increase in the film thickness. The overdamped junctions showed a characteristic voltage Vc of 0.8 mV and a critical current density Jc of 22 A/cm2 at 4.2 K.

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Applied Superconductivity, IEEE Transactions on  (Volume:19 ,  Issue: 3 )