Cart (Loading....) | Create Account
Close category search window
 

Prediction of GaAs MESFET process-induced variations using a device-physics-based analytical model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ko-Ming Shih ; Dept. of Electr. Eng., Arlington Univ., TX, USA ; Klemer, David P. ; Liou, J.J.

This paper presents results of the use of a device-physics-based MESFET analysis code to predict the effects of process-induced variations on MESFET parameters. Such an approach is useful for predicting device yields and sensitivities of device parameters to variations in device fabrication processes such as gate recess depth and device dimensions. Our simulation is general in the sense that it can allow for arbitrary doping profiles and velocity-field characteristics.

Published in:

Southcon/94. Conference Record

Date of Conference:

29-31 March 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.