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Prediction of GaAs MESFET process-induced variations using a device-physics-based analytical model

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3 Author(s)
Ko-Ming Shih ; Dept. of Electr. Eng., Arlington Univ., TX, USA ; Klemer, David P. ; Liou, J.J.

This paper presents results of the use of a device-physics-based MESFET analysis code to predict the effects of process-induced variations on MESFET parameters. Such an approach is useful for predicting device yields and sensitivities of device parameters to variations in device fabrication processes such as gate recess depth and device dimensions. Our simulation is general in the sense that it can allow for arbitrary doping profiles and velocity-field characteristics.

Published in:

Southcon/94. Conference Record

Date of Conference:

29-31 March 1994