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Design of a high gain power amplifier using a bias dependent large signal MESFET model and the describing function technique

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3 Author(s)
S. Munoz ; Fac. de Ciencias Fisicas, Univ. Complutense de Madrid, Spain ; J. L. Sebastian ; J. D. Gallego

A MESFET microwave power amplifier has been designed using a large-signal quasi-static model with bias dependent elements. This model has been derived from experimental S parameters and dc measurements. The analysis and gain optimization of the amplifier is performed by using the describing function technique. Optimum bias device conditions in C class are obtained for maximum gain. Experimental results show an excellent agreement with the theoretical analysis

Published in:

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Date of Conference:

25-27 Oct 1995