Cart (Loading....) | Create Account
Close category search window
 

Design of a high gain power amplifier using a bias dependent large signal MESFET model and the describing function technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Munoz, S. ; Fac. de Ciencias Fisicas, Univ. Complutense de Madrid, Spain ; Sebastian, J.L. ; Gallego, J.D.

A MESFET microwave power amplifier has been designed using a large-signal quasi-static model with bias dependent elements. This model has been derived from experimental S parameters and dc measurements. The analysis and gain optimization of the amplifier is performed by using the describing function technique. Optimum bias device conditions in C class are obtained for maximum gain. Experimental results show an excellent agreement with the theoretical analysis

Published in:

Signals, Systems, and Electronics, 1995. ISSSE '95, Proceedings., 1995 URSI International Symposium on

Date of Conference:

25-27 Oct 1995

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.