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The scaling of CMOS technology has led to development of amplifiers up to 100 GHz and even beyond. As the technology enables the integration of many functions on silicon and is suitable for mass production, the cost-effective utilization of millimeter-wave frequencies becomes possible. Despite the possibilities, the millimeter-wave potential of deep submicron CMOS is easily lost in the poor performance of the passive components around the transistors. This paper demonstrates that 65 nm-baseline 6-metal CMOS technology is suitable for designing 100 GHz circuits having a competitive performance when compared to other published CMOS designs.