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A 172mm2 32Gb MLC NAND flash memory in 34nm CMOS

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34 Author(s)

As applications for NAND continue to grow and cost remains a primary market driver, it is necessary to deliver increased storage capacities at smaller process lithography while meeting high performance requirements. Design plays a pivotal role by providing architectures and design solutions that minimize the impact of bitline and wordline resistance and capacitance (RC) requirements and cell-reliability constraints. This paper presents a device that employs chip architecture, datapath, and analog architecture solutions that address these challenges while meeting high performance requirements. This 32 Gb MLC NAND delivers 50 mus tREAD, 900 mus tPR0G and 9 MB/s write throughput in a 34 nm technology.

Published in:

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

Date of Conference:

8-12 Feb. 2009