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Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems

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5 Author(s)
Anselm, K.A. ; Applied Optoelectronics Incorporated, 13111 Jess Pirtle Blvd., Sugar Land, Texas 77478 ; Hwang, W.Y. ; Ren, H.W. ; Zhang, D.
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Molecular beam epitaxy (MBE) was used to grow ridge-waveguide distributed feedback (DFB) lasers for uncooled coarse wavelength division multiplexing applications. The lasers covered a wavelength range from 1270 to 1610 nm and a temperature range of at least -20 to 85 °C. The MBE growth includes atomic hydrogen cleaning of exposed InGaAsP surfaces for regrowth over a DFB grating. The devices show good performance over the whole wavelength range, with 85 °C median threshold currents from 25 to 40 mA depending on the wavelength. Accelerated lifetime testing indicates minimal degradation with TO packaged devices showing less than a 1% increase in operating current after 4000 h at 85 °C.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 3 )