By Topic

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lubyshev, D. ; IQE Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 ; Fastenau, J.M. ; Wu, Y. ; Liu, W.K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2884749 

A direct growth approach using composite metamorphic buffers was employed for monolithic integration of InP-based high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) on Ge and Ge-on-insulator (GeOI)/Si substrates using molecular beam epitaxy. GaAs layers nucleated on these substrates and grown to a thickness of 0.5 μm were optimized to minimize the nucleation and propagation of antiphase boundaries and threading dislocations, and exhibited an atomic force microscopy rms roughness of ∼9 Å and x-ray full width at half maximum of ∼36 arc sec. A 1.1 μm thick graded InAlAs buffer was used to transition from the GaAs to InP lattice parameters. The density of threading dislocations at the upper interface of this InAlAs buffer was ∼107 cm-2 based on cross-sectional transmission electron microscopy analyses. HEMT structures grown metamorphically on GeOI/Si substrates using these buffer layers demonstrated transport properties equivalent to base line structures grown on InP substrates, with room temperature mobility greater than 10 000 cm2/V s. Similarly, double heterojunction bipolar transistors (D-HBTs) grown metamorphically on GeOI/Si substrates and fabricated into large area devices exhibited dc parameters close to reference D-HBTs grown on InP substrates.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 3 )