By Topic

Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Chen, Wei-Hsin ; Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, Republic of China ; Chen, Tzu-Pin ; Lee, Chi-Jhung ; Hung, Ching-Wen
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Interesting temperature-dependent characteristics of InP/InGaAs-based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, both studied devices show wider collector current (IC) operation regions, with over 11 decades in magnitude of collector current (IC=10-12 to 10-1 A). However, the studied DHBT exhibits improved breakdown characteristics [common-emitter breakdown voltage (BVCEO)=8.05 V and common-base breakdown voltage (BVCBO)=11.3 V] and low output conductance at high temperature. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in the DHBT device. As compared with the studied SHBT, the studied DHBT shows a lower multiplication factor and weaker temperature dependence. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 2 )