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Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors

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8 Author(s)
Chen, Wei-Hsin ; Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, Republic of China ; Chen, Tzu-Pin ; Lee, Chi-Jhung ; Hung, Ching-Wen
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Interesting temperature-dependent characteristics of InP/InGaAs-based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, both studied devices show wider collector current (IC) operation regions, with over 11 decades in magnitude of collector current (IC=10-12 to 10-1 A). However, the studied DHBT exhibits improved breakdown characteristics [common-emitter breakdown voltage (BVCEO)=8.05 V and common-base breakdown voltage (BVCBO)=11.3 V] and low output conductance at high temperature. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in the DHBT device. As compared with the studied SHBT, the studied DHBT shows a lower multiplication factor and weaker temperature dependence. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 2 )

Date of Publication:

Mar 2008

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