Cart (Loading....) | Create Account
Close category search window
 

Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhang, R. ; Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, United Kingdom ; Ren, Z. ; Yu, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2839882 

The authors report the fabrication and characterization of InGaAsP/InP rectangular ring laser photonic integration circuits based on active vertical-coupler structure by cascade reactive ion etching/inductively coupled plasma etching technology. This novel etching scheme can efficiently balance the photolithography, masking, and semiconductor etching requirements when several etching depths are demanded. For the 920 μm circumference of ring lasers with coupler length (Lc) of 300 μm, the smallest total threshold current (Ic+Id) of 75 mA is achieved. Varying threshold situation and its sensitivity to the coupling parameters predict that the performance of such devices is not dominated by the nonideal fabrication loss, even though total internal-reflection mirrors are formed by etching twice. Such successful fabrication indicates that this can be widely employed to fabricate the other photonic integrated circuit components where multilevel deep etching is required.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 2 )

Date of Publication:

Mar 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.