By Topic

Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Vervisch, V. ; Ion Beam Services, ZI Peynier-Rousset, rue Gaston Imbert Prolongée, 13790 Peynier, France and TECSEN UMR 6122, Université Paul Cézanne, Service 231, 13397 Marseille Cedex 20, France ; Etienne, H. ; Torregrosa, F. ; Roux, L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

To achieve the requirements of the 45 nm ITRS technology node and beyond, beamline implantation has reached its limit in terms of low energies. Plasma immersion ion implantation (PIII) is thus an alternative doping technique for the formation of ultrashallow junctions for source/drain extension in silicon devices. In this study, the authors present some results obtained on the PIII prototype called PULSION® designed by the IBS French company. In previous works [F. Torregrosa etal, Proceedings of the 14th International Conference on Ion Implant Technology, 2004 (unpublished); Proceedings of the 16th International Conference on Ion Implant Technology, 2006 (unpublished), p. 6], it has been shown that this machine offers the possibility to reach ultralow energy implantations and then to obtain implantation depths of only a few nanometers. One of the main issues is then to highly activate these junctions with a limited diffusion of dopants. Wafers have been implanted by PULSION® with acceleration voltages from 1 to 2 kV at saturation dose, with or without preamorphization implantation (PAI). Then, they have been annealed by a XeCl excimer laser with a wavelength of 193 nm, with energy densities from 275 to 600 mJ/cm2 and several shots. Electrical and physicochemical characterizations such as secondary-ion-mass spectrometry, four-point probe, and optical noncontact measurements were then performed. In this article, the authors investigate the effects of PAI, implantation parameters, and laser fluence on the junction specifications (depth, sheet resistance, and leakage current).

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 1 )