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Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing

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1 Author(s)
Gossmann, Hans-Joachim L. ; Varian Semiconductor Equipment Associates, Gloucester, Massachusetts 01930

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The fundamental design goals for a high-performance logic technology, maximizing speed while minimizing power, drive the design of the junctions and in turn the requirements on dopant placement and activation. In the early nodes implant energies of tens of keV and furnace anneals sufficed. Scaling into the deep submicron regime brought transient enhanced diffusion to the forefront and necessitated its control. This gave rise to rapid thermal annealing and low energy implants. The requirements of current high-performance logic technologies can only be satisfied with careful defect engineering and a further reduction in thermal budget at increased annealing temperatures: flash or laser annealing. Those almost diffusionless anneals make implant precision, such as angle control, imperative. Simultaneously, productivity requirements of implanters add molecular clusters to the list of implant species and lead for certain applications to a switch from beam line to plasma implantation.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 1 )

Date of Publication:

Jan 2008

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