Cart (Loading....) | Create Account
Close category search window
 

Nonlocal reduced boron diffusivity in silicon below strained Si1-xGex surfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Carroll, M.S. ; Photonic Microsystems Technology, Sandia National Laboratories, P. O. Box 5800, M.S. 1082, Albuquerque, New Mexico 87185 ; Suh, Y.S. ; Levy, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2817631 

The silicon (Si) surface can be the dominant source of self-interstitials for many annealing conditions. Incorporation of germanium (Ge) and strain into the surface may be expected to perturb the equilibrium point defect concentrations at the surface (i.e., the atomic steps at which the point defects are generated and annihilated) and consequently in the bulk Si. In this work, boron (B) diffusion marker layers were epitaxially grown in Si by rapid thermal chemical vapor deposition followed by either undoped Si, 45 nm of Si0.75Ge0.25, or 5 nm of Si0.55Ge0.45 leaving a surface with three different Ge contents. The B diffusivity (DB) below the Si1-xGex surface layers was found to be as much as two times slower than that in the all-Si samples between 800 and 900 °C. The activation energy for the DB in the Si1-xGex capped samples was also observed to increase to ∼4.1 eV. This work demonstrates that a Si1-xGex surface can reduce the DB in the underlying Si during N2 annealing. Furthermore, this novel test structure helps separate the effects of strain and local Ge trapping on DB in Si1-xGex.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 1 )

Date of Publication:

Jan 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.