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GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

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5 Author(s)
Yu, S.Q. ; Center for Solid State Electronics Research and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206 ; Cao, Y. ; Johnson, S.R. ; Zhang, Y.H.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2819260 

Theoretical calculations of the mode characteristics of an equilateral-triangle resonator (ETR) with a 10 μm cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 μm and a longitudinal mode separation of 100 nm. This mode has a quality factor (∼2×105) that is much larger than the first (∼5×104) and second (∼3×104) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. An electrically injected ETR based on this design is fabricated from an InGaAsSb/AlGaAsSb/GaSb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 μm emission wavelength. This device achieved single mode, continuous wave operation at 77 K with a threshold current of 0.5 mA and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 mA.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 1 )

Date of Publication:

Jan 2008

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