Cart (Loading....) | Create Account
Close category search window
 

On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO2 etching process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Jinnai, Butsurin ; Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan ; Orita, Toshiyuki ; Konishi, Mamoru ; Hashimoto, Jun
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2794050 

The authors investigated charge accumulation in high-aspect-ratio contact-hole structures by using the new on-wafer monitoring device they fabricated on a Si substrate of 8 in. in diameter by using a conventional production process for semiconductor devices. The device has high-aspect-ratio contact-hole structures that are comparable with the practical interconnect structures of recent dynamic random access memory devices. In this article they discuss charge accumulation and the electric conductivity of fluorocarbon polymer deposited on the sidewall in high-aspect-ratio contact holes during plasma etching processes. They also monitored the charge accumulation during pulse-time-modulated (TM) plasma etching of high-aspect-ratio SiO2 contact-hole structures and found that the charge accumulation potential between the top and bottom of the contact-hole structures increased with the aspect ratio of the contact holes. Even in high-aspect-ratio contact holes the charge accumulated during TM plasma exposure was less than that accumulated during the conventional continuous-wave plasma exposure. The electrical conductivity of the fluorocarbon polymer deposited on the sidewall was increased by ion bombardment and was lower in high-aspect-ratio contact holes than in low-aspect-ratio contact holes. The new on-wafer monitoring device is a very effective tool for investigating local charge accumulation during the etching of device structures.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 6 )

Date of Publication:

Nov 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.