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Interface and optical properties of InGaAsNSb/GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy

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5 Author(s)
Li, W. ; Department of Electrical Engineering, Columbia University, New York, New York 10027 ; Pei, C. ; Torfi, A. ; Moscicka, D.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2748411 

InGaAsNSb/GaAs quantum wells (QWs) have been grown on GaAs (411)A substrates by solid-source molecular beam epitaxy. InGaAsNSb/GaAs QWs on GaAs (411)A exhibited remarkably enhanced photoluminescence efficiency compared with the same structures on conventional GaAs (100) substrates. It was further observed that the optimum growth temperature for (411)A was 30 °C higher than that for (100). A model based on the self-assembling of local rough surface domains into a unique global smooth surface at the lowest energy state of the system is proposed to explain the phenomenon.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 4 )

Date of Publication:

Jul 2007

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