By Topic

Evaluation of new materials for plasmonic imaging lithography at 476 nm using near field scanning optical microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Backer, Scott A. ; College of Chemistry, University of California, Berkeley, California 94720-1460 ; Suez, I. ; Fresco, Zachary M. ; Frechet, J.M.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2757184 

A new resist formulation was successfully patterned using near field optical microscopy in order to simulate the conditions prevailing in silver based plasmonic imaging tools. Radiation at 476 nm was transmitted through a near field scanning optical microscopy fiber probe tip to cross-link a film of poly(4-methacrylmethyl styrene) via polymerization of pendant methacryloyl groups using camphorquinone and dimethyl aniline as an initiating system. Patterns were generated by scanning at several speeds in order to moderate the dose while maintaining a constant probe height of about 5 nm above the sample through shear force feedback. After development, lines corresponding to the exposed regions were observed. At a scanning speed of 4 μm/s, the observed pattern has a full width at half maximum of 275 nm and a height of ∼25 nm.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 4 )