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Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces

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7 Author(s)
Choi, Soojeong ; Department of Physics, Duke University, Durham, North Carolina 27708 ; Kim, Tong-Ho ; Everitt, Henry O. ; Brown, April
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Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be an effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c-plane GaN (0001) and nonpolar m-plane GaN (1-100) surfaces for Ga beam equivalent pressures in the range of 8.96×10-8–1.86×10-7 Torr, Ga pulses in the range of 5–360 s, and for substrate temperatures between 650 and 750 °C.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 3 )

Date of Publication:

May 2007

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