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Influence of deposition pressure and rf power on the structure and electrical properties of Zr0.8Sn0.2TiO4 thin films prepared by rf magnetron sputtering

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3 Author(s)
Cheng-Liang Huang ; Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan ; Wang, Jun-Jie ; Cheng-Hsing Hsu

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ZnO-doped Zr0.8Sn0.2TiO4 (ZST) films deposited on n-type Si (100) substrates at different deposition pressures and rf powers were investigated. The structural and morphological characteristics analyzed by x-ray diffraction (XRD), atomic force microscopy, and scanning electron microscopy were found to be affected by deposition conditions, such as deposition pressure (2, 5, and 8 mTorr) and rf power (250, 350, and 450 W). Highly oriented ZST (101) and (111) perpendicular to the substrate surface were identified at a deposition pressure of 8 mTorr and rf power of 450 W. The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with increasing rf power. From observing the surface morphology, ZST thin films exhibit a columnar structure. The electrical properties were measured using capacitance-voltage and current-voltage measurements on metal-insulator-semiconductor capacitor structures. The leakage current decreased with increasing rf power and deposition pressure. As rf power=450 W and deposition pressure=8 mTorr, a leakage-current density of 2.26×10-9 A/cm2 was obtained at 5 V.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 2 )