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Modeling of linewidth measurement in scanning electron microscopes using advanced Monte Carlo software

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4 Author(s)
Babin, S. ; Abeam Technologies, Castro Valley, California 94546 ; Borisov, S. ; Ivanchikov, A. ; Ruzavin, I.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2366701 

Accurate measurement of linewidth is a critical problem in sub-100 nm semiconductor manufacturing, where required accuracy is below 1 nm. Critical dimension scanning electron microscopes (CD-SEMs) are usually used for such measurements. A cross correlation of CD-SEMs, while demonstrating a good relative trend, is often subjected to a significant absolute linewidth error. There is no proven algorithm for absolute edge detection in CD-SEMs. In this article, the authors demonstrate that edge detection depends greatly on parameters of SEM settings, such as beam diameter, and pattern properties, such as the wall angle of a pattern. When both the signal and pattern are known, an offset for a specific SEM algorithm can be found. An algorithm for automatic edge detection in CD-SEMs can be tuned for beam parameters and the type of pattern. A SEM signal was simulated using the advanced Monte Carlo software CHARIOT. Input data for the modeling were three dimensional microstructures and e-beam parameters. A known pattern was then compared to a simulated signal. Such a comparison allowed to define the edge position and calibrate a SEM so that any system- and pattern-dependent errors could be removed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 6 )

Date of Publication:

Nov 2006

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