Cart (Loading....) | Create Account
Close category search window

Modeling of linewidth measurement in scanning electron microscopes using advanced Monte Carlo software

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Babin, S. ; Abeam Technologies, Castro Valley, California 94546 ; Borisov, S. ; Ivanchikov, A. ; Ruzavin, I.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Accurate measurement of linewidth is a critical problem in sub-100 nm semiconductor manufacturing, where required accuracy is below 1 nm. Critical dimension scanning electron microscopes (CD-SEMs) are usually used for such measurements. A cross correlation of CD-SEMs, while demonstrating a good relative trend, is often subjected to a significant absolute linewidth error. There is no proven algorithm for absolute edge detection in CD-SEMs. In this article, the authors demonstrate that edge detection depends greatly on parameters of SEM settings, such as beam diameter, and pattern properties, such as the wall angle of a pattern. When both the signal and pattern are known, an offset for a specific SEM algorithm can be found. An algorithm for automatic edge detection in CD-SEMs can be tuned for beam parameters and the type of pattern. A SEM signal was simulated using the advanced Monte Carlo software CHARIOT. Input data for the modeling were three dimensional microstructures and e-beam parameters. A known pattern was then compared to a simulated signal. Such a comparison allowed to define the edge position and calibrate a SEM so that any system- and pattern-dependent errors could be removed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 6 )

Date of Publication:

Nov 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.