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Anisotropic high aspect ratio etch for perfluorcyclobutyl polymers with stress relief technique

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3 Author(s)
Rahmanian, Nazli ; Nano and Micro Devices Center, University of Alabama in Huntsville, Huntsville, Alabama 35899 ; Kim, Seunghyun ; Nordin, G.P.

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The authors have developed an anisotropic, high aspect ratio (18:1) etch for perfluorocyclobutyl (PFCB) polymers with trenches as narrow as 800 nm using a CO/O2 etch chemistry in an inductively coupled plasma reactive ion etcher. Anisotropy is achieved by carbon sidewall passivation. The motivation for this etch development is to use the air trenches as very compact waveguide splitters [S. Kim etal, Opt. Eng. 45, 054602 (2006)]. The authors report a new trench widening mechanism due to tensile stress of the PFCB films and a method of avoiding this widening through the use of additional stress relief trenches on both sides of the desired trench.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 6 )