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Physical and electrical properties of plasma nitrided germanium oxynitride

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3 Author(s)
Sugawara, Takuya ; Tokyo Electron Ltd., Technology Development Center, Nirasaki, Yamanashi 407-0192, Japan and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 ; Sreenivasan, R. ; McIntyre, Paul C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2348886 

The physical and electrical properties of plasma nitrided germanium oxynitride (GeON) and silicon oxynitride (SiON) layers are studied. In this study, two kinds of plasma nitridation process were utilized to form oxynitride layers. High pressure remote inductive coupled plasma and low pressure radial line slot antenna (RLSA) plasma provide radical dominant and ion dominant plasma nitridation processes, respectively. X-ray photoelectron spectroscopy results show different properties of GeON layers based on each plasma nitridation process. The remote (radical) plasma nitridation forms water soluble nitrogen-germanium bonding, and RLSA (ion) plasma nitridation forms water resistant nitrogen-germanium bonding. Although hydrogen containing plasmas or ion dominant plasma process can incorporate high amount of nitrogen into oxynitride layers, such process is accompanied by water insoluble suboxide formation and charging damage. Using p-type metal oxide semiconductor (MOS) capacitors, basic electrical properties of GeON and SiON films were also studied. Approximately four order magnitude higher gate leakage current was observed on GeON MOS capacitor, which results in capacitance reduction and a large dissipation factor at high gate voltage.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 5 )

Date of Publication:

Sep 2006

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