By Topic

Local photocurrent mapping as a probe of contact effects and charge carrier transport in semiconductor nanowire devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Gu, Y. ; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 ; Romankiewicz, J.P. ; David, J.K. ; Lensch, J.L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2216717 

Three types of two-terminal CdS nanowire devices with distinct current versus voltage characteristics were fabricated by forming Schottky and/or Ohmic contacts in a controlled manner. Argon ion bombardment of CdS nanowires increased the carrier concentration allowing the formation of Ohmic Ti–CdS contacts. Scanning photocurrent microscopy (SPCM) was used to explore the influence of the contacts on the spatially resolved photoresponse in two-terminal devices and to analyze charge carrier transport processes. Modeling of the spatial profiles of the local photocurrent images enabled the quantitative extraction of electron and hole mobility-lifetime products in Ohmic devices and the hole mobility-lifetime product in Schottky devices. Analysis of the evolution of SPCM images with bias suggests that the electric field is localized to the optical generation region in the Ohmic devices and localized beneath the contacts in the Schottky devices.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 4 )