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Growth temperature dependent evolution of the interface structure in Co2FeSi/GaAs(001) hybrid structures

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5 Author(s)
Hashimoto, M. ; Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany ; Herfort, J. ; Trampert, A. ; Schonherr, H.-P.
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The growth temperature dependence of the interface perfection of full Heusler alloy Co2FeSi/GaAs(001) hybrid structures have been examined using transmission electron microscopy (TEM) and high-resolution x-ray diffraction (HRXRD). The film grown at 100 °C shows an atomically abrupt interface without interfacial reaction. In the high-resolution transmission electron microscope (HRTEM) image from the 200 °C film, however, a 1–2 ML (monolayer) interlayer having a contrast different from both Co2FeSi and GaAs was observed at the interface, indicating that interfacial reaction starts at this growth temperature. The layer grown at 350 °C shows a further reacted interface in the HRTEM image, i.e., undulations and large steps at the interface. The interface perfection strongly correlates with the in-plane uniaxial magnetic anisotropy (UMA) as the UMA constant rapidly decreases above 200 °C in accordance with the progress of the interfacial reaction.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 4 )

Date of Publication:

Jul 2006

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