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Growth of thin AlInN/GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

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18 Author(s)
Cywinski, G. ; Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland and TopGaN, Ltd., 01-142 Warsaw, Poland ; Skierbiszewski, C. ; Fedunieiwcz-Z muda, A. ; Siekacz, M.
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In this article, we report on growth of AlInN/GaInN multi-quantum-wells (MQWs) with high Al content (93%) by rf-plasma-assisted molecular-beam epitaxy on (0001) GaN/sapphire templates and on bulk GaN crystals. A series of samples with a barrier thickness of 3 nm and with different well thicknesses of 1.5–3 nm was grown. The wells were doped with Si at a concentration of 5×1019 cm-3. Structures grown on (0001) GaN-based substrates are crack-free, as demonstrated by Nomarski contrast and scanning electron microscopy measurements. X-ray diffraction mapping of a and c lattice parameters shows that AlInN/GaInN MQWs are fully strained and have up to 7% indium in the barriers and up to 10% In in the quantum wells. These structures exhibit intersubband absorptions at room temperature at a wavelength in the range of 2.45–1.52 μm. The AlInN/GaInN strain-compensated MQW structures, having good quality, are very attractive for ultrahigh-bit-rate telecommunication applications at 1.55 μm wavelengths. In addition, because of their low average refractive index, they could be used as thick cladding layers for optical waveguides.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 3 )

Date of Publication:

May 2006

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