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Thermal stability of chemical vapor deposition grown W and WNx thin films in low-k integration structure

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4 Author(s)
Jeon, Sungho ; Surface Chemistry Laboratory of Electronic Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea ; Yong, Kijung ; Park, Sung-Gyu ; Rhee, Shi-Woo

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The Cu/barrier/low-k SiCOH/Si structures were fabricated and their thermal stability was investigated. SiCOH films were deposited by plasma-enhanced chemical vapor deposition using divinyldimethylsilane (DVDMS) and O2. As barrier materials, tungsten and tungsten nitride films were deposited by chemical vapor deposition using W(CO)6 and NH3 sources at 450 °C. Variations of scanning electron microscopy and x-ray diffraction results of Cu/barrier/low-k SiCOH/Si were examined depending on the annealing temperature. Both results showed that W and W2N film were stable up to 500 and above 600 °C, WO3 nanorods were grown from the sample surface. It is thought that the thermal stability of the Cu/barrier/SiCOH/Si structure is closely related with the thermal destruction of the W and WNx films.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 3 )

Date of Publication:

May 2006

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